Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
Homeምርቶችየኢንዱስትሪ ስማርት ሞጁሎችDDR3 UDIME የማህደረ ትውስታ ሞጁሎች ዝርዝር መግለጫዎች

DDR3 UDIME የማህደረ ትውስታ ሞጁሎች ዝርዝር መግለጫዎች

የክፍያ ዓይነት:
L/C,T/T,D/A
ኢንትሮመር:
FOB,EXW,CIF
ደቂቃ ትዕዛዝ:
1 Piece/Pieces
መጓጓዣ:
Ocean,Air,Express,Land
  • የምርት ማብራሪያ
Overview
የምርት ባህሪዎች

ሞዴል ቁጥርNSO4GU3AB

የአቅርቦት ችሎታ እና ተ...

መጓጓዣOcean,Air,Express,Land

የክፍያ ዓይነትL/C,T/T,D/A

ኢንትሮመርFOB,EXW,CIF

ማሸግ እና ማድረስ
የሽያጭ ክፍሎች:
Piece/Pieces

4 ጊባ 1600mhz 240-ፒን DDR3 UDIME


ክለሳ ታሪክ

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

የመረጃ ጠረጴዛን ማዘዝ

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


መግለጫ
ሄንንግማር ያልተገደበ DDR3 SDRARAM DIMS (ያልተሸፈነ የሁለትዮሽ ድራይቭ ትግበራ የሁለተኛ ደረጃ ትዳራቶች) ዝቅተኛ ኃይል ያላቸው, ከፍተኛ ፍጥነት ያለው የማህደረ ትውስታ ሞጁሎች ዝቅተኛ ኃይል ያላቸው ናቸው. NS04G3AB አንድ 512M x 64 ሜትር x 6gb ddr3-1600 ክ.ት.1-1600 ክ.ት.1-1600 ክ.ት.11600 ክ.ክ. SPDው ለጄዲኤ መደበኛ ግትርነት DDR 3-1600 በ 1.5ቪ ከ 11 እስከ 11-11 ጊዜ. እያንዳንዱ የ 240-ፒን ዲም ዲም የወርቅ ግንኙነት ጣቶችን ይጠቀማል. የ SDRAM ያልተስተካከሉ DIMM እንደ ፒሲዎች እና የሥራ ማስቀመጫዎች ያሉ ስርዓቶች ሲጫኑ እንደ ዋና ማህደረ ትውስታ እንዲጠቀሙ የታሰበ ነው.


ዋና መለያ ጸባያት
የ Pows አቅርቦት: VDD = 1.5v (1.425V ወደ 1.575V)
vddq = 1.5v (1.425v ወደ 1.575V)
800mhz fock ለ 1600 ሜት / ሴኮንድ / ፒን
8 ገለልተኛ ውስጣዊ ባንክ
(11, 10, 9, 8, 8, 6, 6,
 የተሸከመ ተጨማሪ ተጨማሪ ማበረታቻ: 0, CL - 2, ወይም CLO - 1 ሰዓት
8-ቢት ቅድመ-ቅጥ
 busst ርዝመት 8 (ያለ ምንም ገደብ), አድራሻው "000" ብቻ ነው, ከ TCCD = 4 ጋር የጠበቀ እንጀራ (A12 ወይም MRS ን በመጠቀም በበረራ ላይ አይነበብም)
ቢ-አቅጣጫዊ ልዩነት የውሂብ ግንድ
የአእምሯቸው (የራስነት) መለካት; ውስጣዊ የራስ መለካት በ ZQ ፒን (RZQU: 240 OHM ± 1%)
 on on odt ፒን በመጠቀም መቋረጥ ይሞታል
የአድራሻ ጊዜ (እ.ኤ.አ.) ከ 85 ድግሪ ሴንቲግሬድ እስከ 8.8URE, 3.9us በ 85 ድግሪ ሴንቲ ግሬድ 3 ቀን <95 ° ሴ>
ashymentous ዳግም ማስጀመር
የማጣቀሻ ውሂብ-ውፅዓት ድራይቭ ጥንካሬ
fly - በቶሎሎጂ
pcb: ቁመት 1.18 "(30 ሚሜ)
ሮስ ደህንነቱ የተጠበቀ እና ሀሎን-ነፃ


ቁልፍ የጊዜ ሰሌዳዎች መለኪያዎች

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


የአድራሻ ሰንጠረዥ

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


የፒን መግለጫዎች

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

ማስታወሻዎች ከዚህ በታች ያለው የፒን መግለጫ ሰንጠረዥ ለሁሉም DDR3 ሞጁሎች የሚገኙ ሁሉም ሊሆኑ የሚችሉ ማጫዎቻዎች ዝርዝር ነው. ሁሉም የተዘረዘሩ ሊሆኑ ይችላሉ በዚህ ሞጁል ላይ አይደገፍም. ለዚህ ሞዱል ለተለየ መረጃ መረጃ ለማግኘት የፒን ምደባዎች ይመልከቱ.


ተግባራዊ የማገጃ ንድፍ

4 ጊባ, 512MX64 ሞጁል (2r8AK)

1


2


ማስታወሻ:
1. በእያንዳንዱ ddr3 ኳስ ላይ የ zq ኳስ ከ መሬት ጋር በተቆራኘ ከውጭ 240ω ± 1% ተቀማጭ ጋር ተገናኝቷል. እሱ ጥቅም ላይ የዋለው የአካል ክፍሎች-መቋረጥን እና ውጫዊ አሽከርካሪው ለማስተካከል የሚያገለግል ነው.



የሞዱል ልኬቶች


የፊት እይታ

3

የፊት እይታ

4

ማስታወሻዎች
1. ሁሉም ልኬቶች በሊሜትር (ኢንች) ውስጥ ናቸው. ማክስ / ደቂቃ ወይም የተለመደው (የተለመደው)
2. ትዕዛዝ በሁሉም ልኬቶች ± 0.15 ሚሜ ካልተገለጸ በስተቀር.
3. ልኬቶች ንድፍ ንድፍ ለማጣቀሻ ብቻ ነው.

የምርት ምድቦች : የኢንዱስትሪ ስማርት ሞጁሎች

ለዚህ አቅራቢ ኢሜይል ላክ
  • *ርዕሰ ጉዳይ:
  • *ለ:
    Mr. Jummary
  • *ኢሜይል:
  • *መልዕክት:
    መልዕክትዎ ከ 20-8000 ቁምፊዎች መሆን አለበት
Homeምርቶችየኢንዱስትሪ ስማርት ሞጁሎችDDR3 UDIME የማህደረ ትውስታ ሞጁሎች ዝርዝር መግለጫዎች
በጥያቄ ይላኩ
*
*

ቤት

Product

Phone

ስለ እኛ

ጥያቄ

እኛ ኢሚልያምን እናነጋግርዎታለን

በፍጥነት ከእርስዎ ጋር ሊገናኝዎ እንዲችል የበለጠ መረጃ ይሙሉ

የግላዊነት መግለጫ: - የእርስዎ ግላዊነት ለእኛ በጣም አስፈላጊ ነው. ኩባንያችን ግልፅ የሆነ ፈቃዶችዎን ለማጣራት የግል መረጃዎን ላለመስጠት ተስፋ ላለመግለጥ ተስፋ እንዳለው.

ላክ